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savantic semiconductor product specification silicon pnp power transistors 2SA1065 description with to-3 package low collector saturation voltage high transition frequency complement to type 2sc2489 applications for audio frequency amplifier and high power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1065 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.1a ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-10a ;i b =-1a -2.0 v v be base-emitter on voltage i c =-10a;v ce =-5v -2.5 v i cbo collector cut-off current v cb =-70v; i e =0 -1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2 ma h fe-1 dc current gain i c =-2a ; v ce =-5v 40 280 h fe-2 dc current gain i c =-10a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 50 mhz h fe-1 classifications r q p o 40-80 60-120 90-180 140-280
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1065 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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